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Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Recht, Daniel; Smith, Matthew J.; Charnvanichborikarn, Supakit; Sullivan, Joseph T.; Winkler, Mark T.; Mathews, Jay; Warrender, Jeffrey M.; Buonassisi, Tonio; Williams, James S.; Gradečak, Silvija; Aziz, Michael J.
Fonte: American Institute of Physics Publicador: American Institute of Physics
Tipo: Artigo de Revista Científica Formato: 8 pages
Relevância na Pesquisa
We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown. Fits to the concentration-depth profile are used to estimate the diffusive speeds, v D, of Au and Zn, and put lower bounds on v D of the other metals ranging from 10² to 10⁴ m/s. Knowledge of v D is used to tailor the irradiation conditions and synthesize single-crystal Si supersaturated with 10¹⁹ Au/cm³ without cellular breakdown. Values of v D are compared to those for other elements in Si. Two independent thermophysical properties, the solute diffusivity at the melting temperature, D s(T m), and the equilibrium partition coefficient, k e, are shown to simultaneously affect v D. We demonstrate a correlation between v D and the ratio D s(T m)/k e ⁰·⁶⁷, which is exhibited for Group III...