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Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films

dos Santos Filho, S. G.; Sonnenberg, V.; Hora, W. G.; da Silva, D. M.; Kassab, L. R. P.
Fonte: Elsevier B.V. Sa Publicador: Elsevier B.V. Sa
Tipo: Artigo de Revista Científica Formato: 2695-2700
ENG
Relevância na Pesquisa
66.94%
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); We report the effects of thermal annealing on the semi-insulating properties of germanate thin films produced by a radio frequency magnetron sputtering process. Electrical and physical characterizations are presented. In the case of PbO-GeO2 films (annealed and not annealed), the electron diffraction analysis from transmission electron microscopy has shown that the amorphous structure predominates, whereas the annealed PbO-GeO2-AgNO3 (1 wt.%) films presented crystalline nanoparticles in the range of 1 to 9 nm composed of Pb, PbO and Ag4GeO4. Also, not annealed and annealed films were used to produce metal-insulator-semiconductor structures. The electrical properties of these structures were analysed from capacitance-voltage and conductance-voltage characteristics. The results showed that the significant leakage current in the accumulation region in the not annealed films can be increased by the annealing process. In addition, stable semi-insulating layers with an almost constant shifting of the capacitance-voltage characteristics are obtained when annealed PbO-GeO2-AgNO3 (1 wt.%) films are employed. Based on a proposed model accounting for the leakage process, the influence of this leakage on the accumulation capacitance was also established. In addition...