Página 3 dos resultados de 865 itens digitais encontrados em 0.003 segundos

Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

Azevedo, G. D.; da Silva, JHD; Avendano, E.
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 329-333
ENG
Relevância na Pesquisa
56.81%
We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.

Physical and morphological characterization of reactively magnetron sputtered TiN films

Vaz, F.; Machado, P.; Rebouta, L.; Mendes, J. A.; Lanceros-Méndez, S.; Cunha, L.; Nascimento, Sérgio M. C.; Goudeau, Ph.; Rivière, J. P.; Alves, E.; Sidor, A.
Fonte: Elsevier Science Publicador: Elsevier Science
Tipo: Artigo de Revista Científica
Publicado em 02/12/2002 ENG
Relevância na Pesquisa
56.82%
The present paper reports the influence of growth conditions on the properties of TiN thin films deposited by rf reactive magnetron sputtering in the low-pressure range. The effects of rf power at the Ti target and the negative bias voltage at the substrate in the morphology, structure, electrical resistivity and colour of the samples were studied in detail. X-Ray diffraction results showed that the delta-TiN phase (a(0) similar to 0.430 nm) is detected in all the samples. The sample prepared with grounded substrate revealed a lattice parameter close to the bulk value (0.424 nm), which is a consequence of a low stress state, due to the absence of ion bombardment. The sample deposited at 1000 W has a lattice parameter of 0.426 nm, close to that of the stress-free material (a(0) =0.424 nm), probably due to some stress relief. All films have a columnar-type structure, lying in the T and I zone of the Thornton Model. The resistivity of the TiN films is almost constant and close to 60 muOmega cm independently of the preparation conditions, except for the films deposited at 1000 W, p similar to 215 muOmega cm, and for the grounded sample, p similar to 153 muOmega cm. These values are probably due to cracks associated with stress relieves...

Ti–Si–C thin films produced by magnetron sputtering : correlation between physical properties, mechanical properties and tribological behavior

Cunha, L.; Vaz, F.; Moura, C.; Munteanu, D.; Ionescu, C.; Rivière, J. P.; Le Bourhis, E.
Fonte: American Scientific Publishers Publicador: American Scientific Publishers
Tipo: Artigo de Revista Científica
Publicado em //2010 ENG
Relevância na Pesquisa
56.81%
Ti–Si–C thin films were deposited onto silicon, stainless steel and high-speed steel substrates by magnetron sputtering, using different chamber configurations. The composition of the produced films was obtained by Electron Probe Micro-Analysis (EPMA) and the structure by X-ray diffraction (XRD). The hardness and residual stresses were obtained by depth-sensing indentation and substrate deflection measurements (using Stoney’s equation), respectively. The tribological behavior of the produced films was studied by pin-on-disc. The increase of the concentration of non-metallic elements (carbon and silicon) caused significant changes in their properties. Structural analysis revealed the possibility of the coexistence of different phases in the prepared films, namely Ti metallic phase ( alpha-Ti or beta-Ti) in the films with higher Ti content. The coatings with highest carbon contents, exhibited mainly a sub-stoichiometric fcc NaCl TiC-type structure. These structural changes were also confirmed by resistivity measurements, whose values ranged from 10E3 Ohm/sq for low non-metal concentration, up to 10E6 Ohm /sq for the highest metalloid concentration. Astrong increase of hardness and residual stresses was observed with the increase of the non-metal concentration in the films. The hardness (H) values ranged between 11 and 27 GPa...

Characteristics of silicon doped chromium nitride coatings produced by magnetron sputtering : the influence of processing parameters

Cunha, L.; Moura, C.
Fonte: INOE Publishing House Publicador: INOE Publishing House
Tipo: Artigo de Revista Científica
Publicado em /07/2011 ENG
Relevância na Pesquisa
56.81%
Silicon doped chromium nitride thin films have been deposited by r.f. reactive magnetron sputtering. The effect of processing parameters, namely the nitrogen partial pressure in the working atmosphere and the power density applied to the Si target, on the properties on the films structure and mechanical properties has been investigated. X-ray diffraction (XRD) was used to analyze the crystalline phases, crystal orientation/texture, size and micro-stress state of the produced films. The mechanical properties, namely the hardness, and resistance to plastic deformation were obtained by nanoindentation. These studies allow establishing relations between the characteristics of the films. The results showed that all the coatings present a face-centered cubic (fcc) CrN structure, with (111) preferred orientation. The calculated grain size is between 13 and 18 nm. The highest measured hardness was around 34 GPa for a film produced with produced with the lowest nitrogen flow rate.

Blocking layer effect on dye-sensitized solar cells assembled with TiO2 nanorods prepared by dc reactive magnetron sputtering

Meng Lijian; Li Can
Fonte: American Scientific Publishers Publicador: American Scientific Publishers
Tipo: Artigo de Revista Científica
Publicado em /04/2011 ENG
Relevância na Pesquisa
56.81%
Three different thickness dense TiO2 (150 nm, 300 nm and 450 nm respectively) films were deposited on ITO substrates by dc reactive magnetron sputtering technique. These dense TiO2 films were used as the blocking layers. After that, TiO2 nanorod films were deposited on these dense TiO2 films by same technique. Both the dense and nanorod TiO2 films have an anatase phase. The dense TiO2 films have an orientation along the [101] direction and the TiO2 nanorod films show a very strong orientation along the [110] direction. These TiO2 materials were sensitized by N719 dye and the DSSCs were assembled using them as photoelectrode. The effect of the blocking layer on the efficiency of the DSSCs is discussed. The DSSC assembled using TiO2 nanorod film with 300 nm thickness blocking layer shows a high efficiency of 2.07%.

The control of the diameter of the nanorods prepared by dc reactive magnetron sputtering and the applications for DSSC

Meng Lijian; Ren Tong; Li Can
Fonte: Elsevier Publicador: Elsevier
Tipo: Artigo de Revista Científica
Publicado em /03/2010 ENG
Relevância na Pesquisa
56.81%
The TiO2 nanorod arrays, with about 1.8 μm lengths, have been deposited on ITO substrates by dc reactive magnetron sputtering at different target-substrate distances. The average diameter of these nanorods can be modified from about 45 nm to 85 nm by adjusting the target-substrate distance from 90 mm to 50 mm. These nanorods are highly ordered and perpendicular to the substrate. Both XRD and Raman measurements show that the nanorods prepared at different target-substrate distances have only an anatase TiO2 phase. The nanorods prepared at the target-substrate distance less than 80 mm have a preferred orientation along the (220) direction. However, this preferred orientation disappears as the target-substrate distance is more than 80 mm. These TiO2 nanorods have been used as the electrodes for dye-sensitized solar cells (DSSC). The highest conversion efficiency, about 4.78%, has been achieved for TiO2 nanorods prepared at 80 mm target-substrate distance.; SFRH/BSAB/862/2008, FCT, Portugal

Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition

Cerqueira, M. F.; Andritschky, M.; Rebouta, L.; Ferreira, J. A.; Silva, M. F.
Fonte: Elsevier Publicador: Elsevier
Tipo: Artigo de Revista Científica
Publicado em //1995 ENG
Relevância na Pesquisa
56.82%
Hydrogenated microcrystalline silicon (microc-Si:H) thin films with Cu as a dopant material (about 2 wt.%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma. The composition and microstructure of the films were analysed by SEM, ERD/RBS, X-ray diffraction and Raman spectroscopy. These techniques revealed a columnar film structure, each column consisting of several small (nano) crystals with a lateral dimension up to 10nm. The crystals are oriented, generally with the (111) plane parallel to the sample surface. The hydrogen content of the thin films is about 27-33 at.%. Low deposition rates and low sputter gas pressures favour crystallisation and grain growth. The behaviour can be understood in terms of the diffusion or relaxation length of the deposited Si-atoms.

Low-temperature fabrication of layered self organized ge clusters by RF-sputtering

Pinto, S. R. C.; Rolo, Anabela G.; Buljan, M.; Chahboun, A.; Bernstorff, S.; Barradas, N. P.; Alves, E.; Kashtiban, R. J.; Bangert, U.; Gomes, M. J. M.
Fonte: Springer Verlag Publicador: Springer Verlag
Tipo: Artigo de Revista Científica
Publicado em 14/04/2011 ENG
Relevância na Pesquisa
56.81%
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.; FEDER - COMPETE - “Programa Operacional Factores de Competitividade"; British Council and the Council of the Portuguese Rectores - Bilateral Cooperation Program BC/CRUP - B 26/08; ELETTRA Synchrotron Radiation Center through the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement no 226716; European COST MP0901-NanoTP Action; Croatian Ministry of Science Higher Education and Sport (project number 098-0982886-2866); Fundação para a Ciência e a Tecnologia (FCT) - SFRH/BD/29657/2006, PTDC/FIS/70194/2006, Scientific and Technological Cooperation Program (CNRST)-2010/2011)

Pulsed DC reactive magnetron sputtering of vanadium dioxide thermochromic thin films

Batista, C.; Teixeira, Vasco M. P.; Ribeiro, R. M.
Fonte: W. S. Maney & Son Ltd. Publicador: W. S. Maney & Son Ltd.
Tipo: Artigo de Revista Científica
Publicado em /02/2011 ENG
Relevância na Pesquisa
56.81%
Vanadium oxides are an important class of materials with a large diversity of physical and chemical properties which derive from a range of single or mixed valences and a large variety of structures. They are already being used in many technological applications such as electrical and optical switching devices, light detectors, temperature sensors, etc. There has been a great interest in a particular phase, VO2(M), due to its thermochromic behaviour near room temperature which allows the development of smart windows with active control of the solar spectrum, for energy efficiency purposes. However, stoichiometric VO2 is difficult to deposit because of a narrow stability range due to the complex vanadium–oxygen reactive system. In this work, vanadium oxide thin films were synthesised on glass substrates by reactive pulsed direct current magnetron sputtering from a vanadium metal target in an O2/Ar atmosphere. Different processing conditions have been chosen in order to evaluate their influence on the crystal phases formed, surface morphologies and thicknesses and optical performance. The films were characterised by X-ray diffractometry in order to examine the crystal structure and identify the phases present in different films. The obtained VO2(M) films were thereafter analysed in terms of surface morphology by scanning electron microscopy and the characteristic reversible semiconductor-metal transition of the VO2 films was evaluate by optical spectrophotometry in the ultraviolet-visible-near infrared.; Fundação para a Ciência e a Tecnologia (FCT) SFRH/BD/40512/2007.

Study of vanadium doped ZnO films prepared by dc reactive magnetron sputtering at different substrate temperatures

Meng Lijian; Teixeira, Vasco M. P.; Santos, M. P. dos
Fonte: American Scientific Publishers Publicador: American Scientific Publishers
Tipo: Artigo de Revista Científica
Publicado em /02/2013 POR
Relevância na Pesquisa
56.81%
ZnO films doped with vanadium (ZnO:V) have been prepared by dc reactive magnetron sputtering technique at different substrate temperatures (RT–500 C). The effects of the substrate temperature on ZnO:V films properties have been studied. XRD measurements show that only ZnO polycrystalline structure has been obtained, no V2O5 or VO2 crystal phase can be observed. It has been found that the film prepared at low substrate temperature has a preferred orientation along the (002) direction. As the substrate temperature is increased, the (002) peak intensity decreases. When the substrate temperature reaches the 500 ºC, the film shows a random orientation. SEM measurements show a clear formation of the nano-grains in the sample surface when the substrate temperature is higher than 400 º C. The optical properties of the films have been studied by measuring the specular transmittance. The refractive index has been calculated by fitting the transmittance spectra using OJL model combined with harmonic oscillator.

Brass smelting dust as a source of ZnO in the production of targets used in magnetron sputtering thin film deposition

Monteiro, R. C. C.; Kullberg, A. T.; Lopes, A. A. S.; Pinto, J. V.; Nunes, D.; Gonçalves, A.; Fortunato, E.; Castro, F.
Fonte: CVR Publicador: CVR
Tipo: Conferência ou Objeto de Conferência
Publicado em /09/2015 ENG
Relevância na Pesquisa
56.81%
The feasibility of using a zinc oxide rich waste (ZnO>95%), dust originated in the brass smelting industrial process, as a raw material to produce targets to be used in radiofrequency magnetron sputtering (RFMS) deposition of ZnO thin films was investigated. The ZnO waste was characterized in terms of chemical and mineralogical compositions and particle size distribution. The targets were prepared by uniaxial pressing of the ZnO waste followed by sintering in air at a temperature in the range 900-1200 ºC. The density of sintered targets increased with sintering temperature, and zincite (ZnO) was the predominant crystalline phase identified by X-ray diffraction (XRD). Scanning electron microscopy (SEM) revealed zincite grains, with an average size ~2 m and a nonhomogeneous microstructure due to the presence of dense aggregates. Preliminary MS thin film deposition tests on a glass substrate produced transparent nanostructured ZnO thin films with a homogeneous microstructure. Research work is underway to process ZnO waste-based targets with an improved microstructure in order to obtain RFMS deposited ZnO thin films with optimized final electrical and optical properties.

Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - Annealing effect on the Er emission

Cerqueira, M.F.; Monteiro, Teresa; Soares, Manuel; Kozanecki, A.; Alpuim, P.; Alves, E.
Fonte: WILEY-VCH Verlag GmbH Publicador: WILEY-VCH Verlag GmbH
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
56.88%
In the present work, erbium doped nanocrystalline silicon thin films were produced by reactive magnetron sputtering on glass substrates under different conditions (substrate temperature and Er content). The film structure was studied using Raman spectroscopy. The chemical composition was determined using the RBS technique. All the samples show sharp 4I13/2 → 4I15/2 intra-4f11 emission of Er 3+ related centres with its maximum positioned at the1.54 μm. However, the intensity of this transition (strongly dependent on the chemical composition of the matrix where the nanocrystals are embedded in and also on the structure of the matrix) changes after thermal annealing treatment. For the less crystalline samples our results show an increase of the Er3+ PL intensity and for the highly crystalline ones the Er emission vanishes even at low temperature. This behaviour was studied and explained in this work, on the basis of energy transfer between Si and Er ions.; Partilhar documento na coleção da comunidade Laboratório Associado I3N

Visible and infrared photoluminescence from erbium-doped silicon nanocrystals produced by rf sputtering

Cerqueira, M.F.; Losurdo, M.; Monteiro, T.; Stepikova, M.; Soares, M.J.; Peres, M.; Alpuim, P.
Fonte: WILEY-VCH Verlag GmbH Publicador: WILEY-VCH Verlag GmbH
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
56.81%
Erbium-doped low-dimensional Si films with different microstructures were deposited by reactive magnetron sputtering on glass substrates by varying the hydrogen flow rate during deposition. Amorphous, micro- and nanocrystalline samples, consisting of Si nanocrystalls embedded in silicon-based matrices with different structures, were achieved with optical properties in the visible and IR depending on nanocrystalline fraction and matrix structure and chemical composition. Structural characterization was performed by X-ray diffraction in the grazing incidence geometry and Raman spectroscopy. The chemical composition was studied using RBS/ERD techniques. Spectroscopic ellipsometry was combined with the previous techniques to further resolve the film microstructure and composition. In particular, the distribution along the film thickness of the volume fractions of nanocrystalline/amorphous silicon and SiOx phases has been obtained. In this contribution we discuss visible and infrared photoluminescence as a function of sample microstructure and of the oxygen/hydrogen concentration ratio present in the matrix.; FCT - POCTI/CTM/39395; INTAS Project #03-51-6486

Effect of Annealing Temperature on TiO(2) Nanorod Films Prepared by dc Reactive Magnetron Sputtering for Dye-Sensitized Solar Cells

Meng, LJ; Li, C; dos Santos, MP
Fonte: Publisher: SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS Source: JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS Volume: 21 Issue: 4 Pages: 770-776 DOI: 10.1007/s10904-011-9538-y Published: DEC 2011 Publicador: Publisher: SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS Source: JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS Volume: 21 Issue: 4 Pages: 770-776 DOI: 10.1007/s10904-011-9538-y Published: DEC 2011
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
56.81%
Abstract: Anatase TiO(2) nanorod films have been prepared on ITO coated glass substrates at room temperature by dc reactive magnetron sputtering technique. The nanorods are highly ordered and are perpendicular to the substrate. XRD measurements show that the anatase nanorods have a preferred orientation along the [110] direction. The prepared nanorods were annealed at different temperatures (200-500 A degrees C) in air for 1 h. The dye-sensitized solar cells (DSSC) have been made using the as-deposited and annealed TiO(2) nanorods as working electrodes. It has been found that annealing improves the efficiency of the DSSC. An optimum conversion efficiency of 2.13%, at 100 mW/cm(2) light intensity has been achieved with TiO(2) nanorods annealed at 300 A degrees C.

Study of Vanadium Doped ZnO Films Prepared by dc Reactive Magnetron Sputtering at Different Substrate Temperatures

Meng, Lijian; Teixeira, Vasco; Dos Santos, M.P.
Fonte: American Scientific Publishers Publicador: American Scientific Publishers
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
56.81%
ZnO films doped with vanadium (ZnO:V) have been prepared by dc reactive magnetron sputtering technique at different substrate temperatures (RT–500 C). The effects of the substrate temperature on ZnO:V films properties have been studied. XRD measurements show that only ZnO polycrystalline structure has been obtained, no V2O5 or VO2 crystal phase can be observed. It has been found that the film prepared at low substrate temperature has a preferred orientation along the (002) direction. As the substrate temperature is increased, the (002) peak intensity decreases. When the substrate temperature reaches the 500 C, the film shows a random orientation. SEM measurements show a clear formation of the nano-grains in the sample surface when the substrate temperature is higher than 400 C. The optical properties of the films have been studied by measuring the specular transmittance. The refractive index has been calculated by fitting the transmittance spectra using OJL model combined with harmonic oscillator.

Nanocrystalline GaN and GaN: H films grown by RF-magnetron sputtering

Leite,D. M. G.; Pereira,A. L. J.; Silva,L. F. da; Silva,J. H. Dias da
Fonte: Sociedade Brasileira de Física Publicador: Sociedade Brasileira de Física
Tipo: Artigo de Revista Científica Formato: text/html
Publicado em 01/09/2006 EN
Relevância na Pesquisa
56.81%
The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N2/H2/Ar flow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (Ts < 420K). The main effects resulting from the deposition parameters variations on the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicates that the grain sizes ( ~ 15nm) and the crystallized volume fraction significantly decrease when hydrogen is present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorption edges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenated samples present larger absorption tails encroaching into the gap energies.

Influence of the substrate bias voltage on the crystallographic structure and surface composition of Ti6A14V thin films deposited by rf magnetron sputtering

Alfonso,J. E.; Torres,J.; Marco,J. F.
Fonte: Sociedade Brasileira de Física Publicador: Sociedade Brasileira de Física
Tipo: Artigo de Revista Científica Formato: text/html
Publicado em 01/09/2006 EN
Relevância na Pesquisa
56.81%
In this work, the influence of the substrate bias on the crystalline structure and surface composition of Ti6Al4V thin films prepared by rf magnetron sputtering were studied. Samples were grown onto two different types of substrates: AISI 420 steel and common glass using a Ti6Al4V (99.9 %) target. Substrate bias was varied from -100V to -200 V. Samples were characterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM), and X-Ray Photoelectron Spectroscopy (XPS). It was observed that the increase of the substrate voltage improved the crystallinity of the deposited films. The stoichiometry of the deposited thin films was studied by EDX and found to be slightly different from that of the target material. Finally, the passive film spontaneously formed on the deposited films upon exposure to the laboratory atmosphere was studied by XPS. The composition of the passive film is rather complex since it contains several forms of oxidized titanium and vanadium as well as Al2O3.

Pulsed bias effect on crystallinity and nano-roughness of Ti6Al4V-N films deposited by grid assisted magnetron sputtering system

Stryhalski,Joel; Fontana,Luis César; Odorczyk,Marcos Fernando; Scholtz,Juliano Sadi; Sagás,Julio César; Recco,Abel André Candido
Fonte: ABM, ABC, ABPol Publicador: ABM, ABC, ABPol
Tipo: Artigo de Revista Científica Formato: text/html
Publicado em 01/12/2014 EN
Relevância na Pesquisa
56.81%
This paper reports the effect of pulsed bias in comparison with DC bias on reactive deposition of Ti6Al4V-N films, obtained by Grid Assisted Magnetron Sputtering. The results obtained by X-Ray diffraction (XRD), Energy Dispersive X-ray Fluorescence Spectrometer (EDX) and Atomic Force Microscopy (AFM) show that bias condition affects the crystalline texture and change the roughness and morphology of the films. The DC bias favors the film crystallinity, however the pulsed bias produces smoother films.

Elaboration of nitride thin films by reactive sputtering

Jouan,Pierre Yves; Tricoteaux,Arnaud; Horny,Nicolas
Fonte: Escola de Minas Publicador: Escola de Minas
Tipo: Artigo de Revista Científica Formato: text/html
Publicado em 01/06/2006 EN
Relevância na Pesquisa
56.93%
The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

Characterization of adherence for Ti6Al4V films RF magnetron sputter grown on stainless steels

Garzón,Carlos Mario; Alfonso,José Edgar; Corredor,Edna Consuelo
Fonte: DYNA Publicador: DYNA
Tipo: Artigo de Revista Científica Formato: text/html
Publicado em 01/06/2014 EN
Relevância na Pesquisa
56.82%
Ti6Al4V films were grown on UNS S31600 austenitic stainless steel samples by RF magnetron sputtering. On top of samples, macroindentation tests were carried out to characterize the film to substrate adherence according to the recommended VDI 3198 procedure. Sputter deposition experiments varying both chamber pressure and target applied power were carried out. All films displayed superior adhesion to the substrates. A non-monotonic relationship between adherence and chamber pressure or target applied power was observed. The lowest adherences were associated with intermediate pressures and powers. The outstanding film to substrate adherence was mainly addressed to monophasic and nanometric film character (crystallite size was roughly 20 ± 10 nm) and to rather high continuity and homogeneity of films.