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Estudo de propriedades elétricas de filmes poliméricos sob irradiação eletrônica; Electrical properties of polymeric films under low-energy electron beam irradiation

Santos, Lucas Fugikawa
Fonte: Biblioteca Digitais de Teses e Dissertações da USP Publicador: Biblioteca Digitais de Teses e Dissertações da USP
Tipo: Dissertação de Mestrado Formato: application/pdf
Publicado em 29/04/1998 PT
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A técnica de injeção de cargas por feixe eletrônico em materiais poliméricos pode ser utilizada como uma importante ferramenta no estudo das propriedades elétricas destes materiais. Fenômenos tais como a emissão eletrônica secundária, o transporte e armazenamento de portadores de carga no volume do material, fenômenos de injeção e condutividade induzida por radiação podem ser observados em películas finas de dielétricos lançando mão desta poderosa técnica. Neste trabalho, utilizamos um canhão de elétrons de energia variável (O a 10 keV) na irradiação de amostras de polianilinas, por nós sintetizadas, para o estudo da emissão secundária e de transporte no volume. Alguns experimentos foram também realizados com o poli(fluoreto de vinilideno), que é um polímero bem mais resistivo que as polianilinas. As medidas de emissão eletrônica foram feitas em circuito aberto, enquanto as medidas de transporte foram obtidas em circuito fechado. Neste segundo tipo de configuração, procuramos fazer uma análise do comportamento da corrente através da amostra pela observação de transientes rápidos (da ordem de 10 ms) de corrente gerados pela injeção de pacotes de carga de penetração bem definida a partir da superfície bombardeada. Propriedades elétricas intrínsecas como a condutividade do material e a permissividade elétrica...

Preparação, caracterização e propriedades elétricas de monocristais de hexafluoreto de fósforo e potássio: KPF6; Preparation, characterization and electrical properties of single crystals of hexafluoride phosphorus and potassium: KPF6

Cavalcante, Edinilton Morais
Fonte: Biblioteca Digitais de Teses e Dissertações da USP Publicador: Biblioteca Digitais de Teses e Dissertações da USP
Tipo: Dissertação de Mestrado Formato: application/pdf
Publicado em 23/09/1987 PT
Relevância na Pesquisa
67.031206%
Realizamos crescimento de monocristal de Hexafluoreto de Fósforo e Potássio:KPF6 pelo método de crescimento em solução aquosa e o estudo das propriedades elétricas. Para isso foram feitas medidas, de solubilidade, tempo de incubação, espectroscopia dispersiva no infra-vermelho, difração de raios-X, condutividade elétrica e constante dielétrica no intervalo de temperatura de hélio líquido a 300°C. Foram detectadas três transições de fases estruturais em APROXIMADAMENTE 0°C, -14,4°C e 193°C e impurezas de CO-23, responsável pelo aumento da condutividade elétrica na região extrínsica. Na defermação do grupo PF6 durante a transição de fase estrutural em -14,4°C há surgimento de um dipolo elétrico com valor de 12,2x10-18ues.cm. E observamos o congelamento do grupo PF6 por volta de -41&#C; It was made the growth of a Potassium Hexafluophosphate: KPF6 monocrystal method of growth in aqueous solution and the study of its electrical properties. With this purpose, it was use of solubility, incubation time, dispersive espectroscopy on the infrared region, X-ray diffraction, electrical conductivity and dieletrical Constant in the range of temperature between liquid helium and 573K. It was detected three strutural phase transitions in 273K...

Microstructural and Nonohmic Properties of ZnO center dot Pr6O11 CoO Polycrystalline System

Ramirez, Miguel Angel; Francisco Fernandez, Jose; de Frutos, Jose; Bueno, Paulo Roberto; Longo, Elson; Varela, José Arana
Fonte: Universidade Federal de São Carlos (UFSCar), Dept Engenharia Materials Publicador: Universidade Federal de São Carlos (UFSCar), Dept Engenharia Materials
Tipo: Artigo de Revista Científica Formato: 29-34
ENG
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); The microstructure and electrical properties of varistors composed of (95-x) ZnO + x Pr6O11+ 5 CoO (ZPC), (x = 0.1, 0.5 and 1.0) and sintered at 1300 and 1350 degrees C, were investigated. According to X-ray diffraction, several phases (ZnO, Pr2O3 and Pr2CoO4) are present when x = 1.0. Using Scanning Electron Microscopy, all of these compositions contain precipitates. These phases are important regarding the development of the microstructure and the electrical properties. The samples with x = 0.1 introduce the best nonohmic behavior (alpha = 9.0), however when x = 0.5 the electrical properties are highly degraded due to the small quantity of effective barriers. The density of superficial states N-IS and donor concentration Nd decreases with Pr6O11 addition. The decrease in the donor concentration is attributed to the annihilation of the donor defects according to the transformation of praseodymium oxides from Pr6O11 to Pr2O3.

Microstructural and nonohmic properties of ZnO.Pr6O11 CoO polycrystalline system

Ramírez, Miguel Angel; Fernández, José Francisco; Frutos, José de; Bueno, Paulo Roberto; Longo, Elson; Varela, José Arana
Fonte: ABM, ABC, ABPol Publicador: ABM, ABC, ABPol
Tipo: Artigo de Revista Científica Formato: 29-34
ENG
Relevância na Pesquisa
57.066445%
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); The microstructure and electrical properties of varistors composed of (95-x) ZnO + x Pr6O11 + 5 CoO (ZPC), (x = 0.1, 0.5 and 1.0) and sintered at 1300 and 1350 °C, were investigated. According to X-ray diffraction, several phases (ZnO, Pr2O3 and Pr2CoO4) are present when x = 1.0. Using Scanning Electron Microscopy, all of these compositions contain precipitates. These phases are important regarding the development of the microstructure and the electrical properties. The samples with x = 0.1 introduce the best nonohmic behavior (α = 9.0), however when x = 0.5 the electrical properties are highly degraded due to the small quantity of effective barriers. The density of superficial states N IS and donor concentration Nd decreases with Pr6O11 addition. The decrease in the donor concentration is attributed to the annihilation of the donor defects according to the transformation of praseodymium oxides from Pr6O11 to Pr2O3.

Effect of oxidizing and reducing atmospheres on the electrical properties of dense SnO2-based varistors

Santos, MRC; Bueno, P. R.; Longo, Elson; Varela, José Arana
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 161-167
ENG
Relevância na Pesquisa
67.028076%
The SnO2 based varistor systems recently presented in the literature appear to have a promising potential in commercial applications. Experimental evidence shows that there is a dependence of nonlinear constant values with thermal treatment under different atmospheres. Thermal treatments in oxygen and nitrogen rich atmospheres at 900 degreesC prove this dependence, indicating that the nonlinear constant values are significantly lower when the material is submitted to a nitrogen atmosphere. Moreover, electrical properties can be restored when the varistor is subjected to thermal treatment at the same temperature in an oxygen atmosphere, indicating that the mechanism seems to be reversible. This paper discusses this behavior focusing in the grain boundary region. Ta2O5 mol% concentrations are also analyzed and the results indicate an optimum Ta2O5 concentration of 0.05 mol% for the electrical properties (alpha = 44 and E-B = 6150 V cm(-1)). (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Structural and electrical properties of ZnO varistors containing different spinel phases

Brankovic, Z.; Brankovic, G.; Poleti, D.; Varela, José Arana
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 115-122
ENG
Relevância na Pesquisa
67.08784%
Structural and electrical properties of ZnO varistors were investigated as a function of spinel composition. Six varistor mixtures differing only in chemical composition of spinel, were prepared by mixing separately synthesized constituent phases (DSCP method). Compositions of constituent phases in sintered samples were investigated by changes of lattice parameters of the phases, as well as by EDS analysis of the constituent phases. It was found that compositions of ZnO, intergranular and spinel phases were partially changed during sintering due to redistribution of additives, that was controlled by starting spinel composition and its stability. Electrical characterization showed significant difference in electrical properties of investigated varistors: nonlinearity coefficients ranging from 22 to 55 and leakage currents differing by the order of magnitude. Activation energies of conduction were obtained from ac impedance spectroscopy measurements. Calculated values of activation energies were in the range 0.61-1.0 eV confirming difference in defect structure of ZnO grain boundaries in varistors containing different spinel phases. (C) 2001 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Electrical properties of screen printed BaTiO3 thick films

Stojanovic, B. D.; Foschini, C. R.; Pejovic, V. Z.; Pavlovic, V. B.; Varela, José Arana
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 1467-1471
ENG
Relevância na Pesquisa
66.883213%
The deposition of thick film pastes by screen-printing is a relatively simple and convenient method to produce thicker layers with thickness up to 100 mum. In the present work, the barium titanate thick films were prepared from mechanically activated powders based on BaC03 and TiO2. After mixing, the powders were calcined at low temperature by slow heating and cooling rates. The thick films were deposited on to Al2O3 substrates through hybrid technology. The obtained films were fired at 850 degreesC together with electrode material (silver/palladium). The electrical properties of thick films: dielectric permittivity, dielectric losses, Curie temperature, hysteresis loop were reported. The obtained BT thick films can be applied in as multilayer capacitors or in gas sensor application. (C) 2003 Elsevier Ltd. All rights reserved.

The role of oxygen vacancies on the microstructure development and on the electrical properties of SnO2-based varistors

Parra, R.; Aldao, C. M.; Varela, José Arana; Castro, M. S.
Fonte: Springer Publicador: Springer
Tipo: Artigo de Revista Científica Formato: 149-156
ENG
Relevância na Pesquisa
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Variations on the microstructure development and on the electrical properties of SnO2-based varistors are discussed on the basis of the oxygen vacancies created or annihilated by the presence of different additives. Electron paramagnetic resonance (EPR) analysis of sintered samples evidenced a substantial increase in the paramagnetic oxygen vacancies concentration when Nb2O5 is added to the SnO2 center dot Co3O4 system. on the other hand, the observed diminution in the concentration of such species after the addition of Fe2O3 indicates solid solution formation. The quantification of paramagnetic oxygen vacancies allowed to confirm the proposed substitutions taking place in the lattice during sintering. These findings are supported by scanning electron microscopy, by density measurements and by current density versus electric field curves. The characterization of secondary phases through EDS assisted SEM and TEM is also reported in this work.

Influence of temperature on the microstructure and electrical properties of BBT thin films

Costa, G. C.; Simoes, A. Z.; Ries, A.; Riccardi, C. S.; Stojanovic, B. D.; Cilense, M.; Zaghete, M.; Varela, José Arana
Fonte: Taylor & Francis Ltd Publicador: Taylor & Francis Ltd
Tipo: Artigo de Revista Científica Formato: 103-112
ENG
Relevância na Pesquisa
66.93985%
The BBT films were prepared by a spin-coating process from the polymeric precursor method (Pechini process). In order to study the influence of the temperature on the BBT microstructure and electrical properties, the films were deposited on platinum coated silicon substrates and annealed from 700degreesC to 800degreesC for 2 hours in oxygen atmosphere. The crystallinity of the films was examined by X-ray diffraction while the surface morphology was analysed by atomic force microscope. The dielectric properties and dissipation factor of BaBi2Ta2O9 films at 1 MHz were observed. The polarization-electric field hysteresis loops revealed the ferroelectric characteristics of BaBi2Ta2O9 thin films.

Electrical properties of the SnO2-based varistor

Pianaro, S. A.; Bueno, P. R.; Olivi, P.; Longo, Elson; Varela, José Arana
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Artigo de Revista Científica Formato: 159-165
ENG
Relevância na Pesquisa
67.131006%
The non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.

Influence of the indium concentration on microstructural and electrical properties of proton conducting NiO-BaCe0.9-xIn xY0.1O3-δ cermet anodes for IT-SOFC application

Zunic, Milan; Brankovic, Goran; Foschini, Cesar Renato; Cilense, Mario; Longo, Elson; Varela, José Arana
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Artigo de Revista Científica Formato: 254-260
ENG
Relevância na Pesquisa
57.17487%
Optimization of the major properties of anodes based on proton conductors, such as microstructure, conductivity and chemical stability, is yet to be achieved. In this study we investigated the influence of indium on the chemical stability, microstructural and electrical characteristics of proton conducting NiO-BaCe0.9-xInxY0.1O 3-δ (NiO-BCIYx) anodes. Four compositions of cermet anode substrates NiO-BCIYx were prepared using the method of evaporation and decomposition of solutions and suspensions (EDSS). Sintered anode substrates were reduced and their microstructural and electrical properties were examined before and after reduction as a function of the amount of indium. Anode substrates tested on chemical stability in the CO2 atmosphere showed high stability compared to anode substrates based on commonly used doped barium cerates. Microstructural properties of the anode pellets before and after testing in CO2 were investigated using X-ray diffraction analysis. Impedance spectroscopy measurements were used for evaluation of electrical properties of the anode pellets and the conductivity values of reduced anodes of more than 14 S cm-1 at 600 °C confirmed percolations through Ni particles. Under fuel cell operating conditions, the cell with a Ni-BCIY20 anode achieved the highest performance...

Morphotropic phase boundary and electrical properties of 1-x[Bi 0.5Na0.5]TiO3 -xBa[Zr0.25Ti 0.75]O3 lead-free piezoelectric ceramics

Parija, B.; Badapanda, T.; Rout, S. K.; Cavalcante, L. S.; Panigrahi, S.; Longo, Elson; Batista, N. C.; Sinha, T. P.
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Artigo de Revista Científica Formato: 4877-4886
ENG
Relevância na Pesquisa
67.028076%
Lead-free solid solutions (1-x)Bi0.5Na0.5TiO 3 (BNT)-xBaZr0.25Ti0.75O3 (BZT) (x=0, 0.01, 0.03, 0.05, and 0.07) were prepared by the solid state reaction method. X-ray diffraction (XRD) and Rietveld refinement analyses of 1-x(BNT)-x(BZT) solid solution ceramic were employed to study the structure of these systems. A morphotropic phase boundary (MPB) between rhombohedral and cubic structures occured at the composition x=0.05. Raman spectroscopy exhibited a splitting of the (TO3) mode at x=0.05 and confirmed the presence of MPB region. Scanning electron microcopy (SEM) images showed a change in the grain shape with the increase of BZT into the BNT matrix lattice. The temperature dependent dielectric study showed a gradual increase in dielectric constant up to x=0.05 and then decrease with further increase in BZT content. Maximum coercive field, remanent polarization and high piezoelectric constant were observed at x=0.05. Both the structural and electrical properties show that the solid solution has an MPB around x=0.05. © 2012 Elsevier Ltd and Techna Group S.r.l.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

Pontes, D. S L; Pontes, F. M.; Pereira-Da-Silva, Marcelo A.; Berengue, O. M.; Chiquito, A. J.; Longo, Elson
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Artigo de Revista Científica Formato: 8025-8034
ENG
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67.028076%
LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

Borges, Joel; Martin, N.; Barradas, Nuno P.; Alves, E.; Eyidi, D.; Beaufort, Marie France; Riviere, J. P.; Vaz, F.; Marques, L.
Fonte: Elsevier Publicador: Elsevier
Tipo: Artigo de Revista Científica
Publicado em /06/2012 ENG
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Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray 2 diffraction and transmission electron microscopy suggested the formation of an aluminumbased polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples...

Electrical properties of cork and derivates

Lança, M. C.; Neagu, E.R.; Dias, C. J.; Gil, Luís; Marat-Mendes, J. N.
Fonte: Laboratório Nacional de Energia e Geologia Publicador: Laboratório Nacional de Energia e Geologia
Tipo: Artigo de Revista Científica
Publicado em //2011 OTHER
Relevância na Pesquisa
67.08784%
The electrical properties of natural cork, commercial cork agglomerates (for floor and wall covering) and a composite of cork/TetraPak® were studied. The composite was developed at LNEG/Portugal and is made of recycled cork and TetraPak® containers. Measurements of isothermal charge and discharge currents (ICC/IDC) and dielectric relaxation spectroscopy (DRS) were made. The isothermal currents characteristics and the samples electrical conductivity were investigated under different conditions (electric field, temperature and measuring atmosphere). Dielectric relaxation spectroscopy was used to quantify the changes in the permittivity with the samples conditioning. Both experimental techniques showed the strong influence of water content on the electrical properties of cork and its derivatives.

Peculiarities in the electrical and magnetic properties of cobalt perovskites Ln1−xMxCoO3 (Ln3+: La3+, M2+: Ca2+, Sr2+, Ba2+; Ln3+: Nd3+, M2+: Sr2+)

Señarís Rodríguez, María Antonia; Breijo, M.P.; Castro García, Socorro; Rey Cabezudo, Carlos José.; Sánchez, M.; Sánchez, R.D.; Mira Pérez, Jorge; Fondado Fondado, Alfonso; Rivas Rey, José
Fonte: Elsevier Publicador: Elsevier
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
57.09415%
We refer here to the electrical and magnetic properties of the Ln1−xMxCoO3 systems (Ln3+: La3+, M2+: Ca2+, Sr2+, Ba2+; Ln3+: Nd3+, M2+: Sr2+), paying special attention to those ferromagnetic compounds that display M–I transitions as temperature rises: La1−xMxCoO3 (M2+: Ca2+, Sr2+, Ba2+) in the compositional interval x=0.2–0.3, and Nd1−xSrxCoO3, with x=0.40. The magneto-transport properties of such materials are peculiar and interesting: they show diodic behavior and large relaxation effects — these latter being specially important in the Nd compound — they display magnetoresistive effects specially at the M–I transition temperatures, and they age with time. All these results are discussed on the basis of the inhomogeneous electronic structure of these doped cobalt perovskites and taking into account the influence of the lanthanide ion on their magnetic and electrical properties.

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

Machado, Diego Henrique de Oliveira; Floriano, Emerson Aparecido; Scalvi, Luis Vicente de Andrade; Saeki, Margarida Juri
Fonte: Trans Tech Publications Ltd Publicador: Trans Tech Publications Ltd
Tipo: Conferência ou Objeto de Conferência Formato: 201-206
ENG
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TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

Influence of injection molding on the electrical properties of polyamide 12 filled with multi-walled carbon nanotubes

VERSAVAUD, Sophie; REGNIER, Gilles; GOUADEC, Gwénaël; VINCENT, Michel
Fonte: Elsevier Publicador: Elsevier
EN
Relevância na Pesquisa
67.163643%
Microinjection-molded and compression-molded polyamide (PA12) matrix composites filled with 0.67, 1.33, 2 and 4 wt% multi-walled carbon nanotubes (MWNTs) were prepared from twin-screw extruded pellets. The compression molded samples have an electrical percolation threshold close to 1.2 wt%. Coupled rheological and electrical measurements show that their electrical properties start decreasing as soon as shear begins and are partially restored during flow, suggesting successively breakage and reconstruction of a percolating network. On the other hand, the electrical properties of the microinjection molded composites are close to the matrix ones, showing that cooling is too fast for the MWNTs to form a network. There is some electrical anisotropy in these composites, as evidenced by a greater conductivity measured in the flow direction. However polarized Raman spectroscopy analysis does not reveal a significant orientation of the MWNTs.

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

Iglesias Santiso, Vanessa; Porti i Pujal, Marc; Nafría i Maqueda, Montserrat; Aymerich Humet, Xavier; Dudek, P.; Schroeder, T.; Bersuker, G.
Fonte: Universidade Autônoma de Barcelona Publicador: Universidade Autônoma de Barcelona
Tipo: Artigo de Revista Científica Formato: application/pdf
Publicado em //2010 ENG
Relevância na Pesquisa
57.07437%
The relationship between electrical and structuralcharacteristics of polycrystalline HfO2films has been investigated by conductive atomic force microscopy under ultrahigh vacuum conditions. The results demonstrate that highly conductive and breakdown (BD) sites are concentrated mainly at the grain boundaries (GBs). Higher conductivity at the GBs is found to be related to their intrinsic electrical properties, while the positions of the electrical stress-induced BD sites correlate to the local thinning of the dielectric. The results indicate that variations in the local characteristics of the high-k film caused by its crystallization may have a strong impact on the electrical characteristics of high-k dielectric stacks.

Effect of pressure on the electrical properties of GaSe/InSe heterocontacts

Vorobets,M.O
Fonte: Sociedad Mexicana de Física Publicador: Sociedad Mexicana de Física
Tipo: Artigo de Revista Científica Formato: text/html
Publicado em 01/12/2010 EN
Relevância na Pesquisa
66.883213%
Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor - insulator - semiconductor) model. Using this model we were able to explain the current - voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport.