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Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating

CASANOVA, J. R.; HEREDIA, E. A.; BOJORGE, C. D.; CANEPA, H. R.; KELLERMANN, G.; Craievich, Aldo Felix
Fonte: ELSEVIER SCIENCE BV Publicador: ELSEVIER SCIENCE BV
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
66.54%
Nanocrystalline ZnO thin films prepared by the sol-gel dip-coating technique were characterized by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), X-ray reflectivity (XR) and grazing incidence small-angle X-ray scattering (GISAXS). The structures of several thin films subjected to (i) isochronous annealing at 350, 450 and 550 degrees C, and (ii) isothermal annealing at 450 degrees C during different time periods, were characterized. The studied thin films are composed of ZnO nanocrystals as revealed by analysing several GIXD patterns, from which their average sizes were determined. Thin film thickness and roughness were determined from quantitative analyses of AFM images and XR patterns. The analysis of XR patterns also yielded the average density of the studied films. Our GISAXS study indicates that the studied ZnO thin films contain nanopores with an ellipsoidal shape, and flattened along the direction normal to the substrate surface. The thin film annealed at the highest temperature, T = 550 degrees C, exhibits higher density and lower thickness and nanoporosity volume fraction, than those annealed at 350 and 450 degrees C. These results indicate that thermal annealing at the highest temperature (550 degrees C) induces a noticeable compaction effect on the structure of the studied thin films. (C) 2011 Elsevier B.V. All rights reserved.; Brazilian Synchrotron Light Laboratory (LNLS); LNLS; Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); FAPESP; SECyT; Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES); CAPES/SECyT; CNPq/CONICET; Consejo Nacional de Investigaciones Científicas y Técnicas de Argentina (CONICET); Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); CNPq (PROSUL); ANPCyT; Agencia Nacional de Promoción Científica y Tecnológica (ANPCyT); CONICET; Consejo Nacional de Investigaciones Científicas y Técnicas de Argentina (CONICET); YPF Foundation; YPF Foundation

Filmes finos de iodeto de chumbo como detector de raios-X para imagens médicas; Lead Iodide Thin Films as X-ray detectors for Medical Imaging

Condeles, José Fernando
Fonte: Biblioteca Digitais de Teses e Dissertações da USP Publicador: Biblioteca Digitais de Teses e Dissertações da USP
Tipo: Tese de Doutorado Formato: application/pdf
Publicado em 05/10/2007 PT
Relevância na Pesquisa
66.52%
Nos últimos anos, acentuou-se o interesse em materiais semicondutores com alto número atômico e larga banda de energia proibida para aplicações na detecção de radiação ionizante à temperatura ambiente, usando o método direto de detecção. Alguns materiais como o PbI2, HgI2, TlBr, CdTe and CdZnTe são bons fotocondutores e podem ser usados à temperatura ambiente. Como um bom candidato, o PbI2 apresenta uma banda de energia proibida acima de 2,0 eV, o qual quando operando à temperatura ambiente apresenta um baixo ruído, baixa corrente de fuga e alta coleta de cargas. O alto poder de frenamento da radiação ionizante é devido ao alto número atômico e alta densidade. Pesquisadores buscam métodos alternativos que minimizem o tempo de deposição e barateiem o custo dos filmes finos de materiais semicondutores candidatos em aplicações médicas, como detector de raios-X à temperatura ambiente para radiografias digitais. Neste sentido, apresentamos dois métodos para a deposição de filmes finos policristalinos de iodeto de chumbo (PbI2). As técnicas de spray pyrolysis (SP) e evaporação de solvente em estufa (ES) foram usadas para a fabricação de filmes finos de PbI2 com relativo baixo tempo de deposição. A técnica de SP foi adotada com o uso de água milli-Q e N.N-dimetilformamida (DMF) como solventes...

Eletrodeposição de filmes finos e materiais nanoestruturados das ligas magnéticas cobalto-níquel e cobalto-níquel-molibdênio; Electrodeposition of CoNi and CoNiMo magnetic alloys thin films and nanowires

Esteves, Marcos Cramer
Fonte: Biblioteca Digitais de Teses e Dissertações da USP Publicador: Biblioteca Digitais de Teses e Dissertações da USP
Tipo: Tese de Doutorado Formato: application/pdf
Publicado em 08/05/2009 PT
Relevância na Pesquisa
66.52%
Este trabalho trata do estudo da eletrodeposição de filmes finos e nanofios magnéticos compostos de cobalto, níquel e molibdênio. Foi avaliada a influência da composição química das soluções utilizadas nas propriedades do material obtido. O uso de uma célula de Hull com eletrodo cilíndrico rotativo permitiu também que fosse estudado com mais detalhe o mecanismo de eletrodeposição da liga CoNiMo. Os filmes finos magnéticos de CoNi e CoNiMo foram eletrodepositados galvanostaticamente utilizando soluções contento citrato ou glicina como aditivo. Composição, microestrutura, morfologia e propriedades magnéticas dos depósitos foram analisados e a influência da composição das soluções e das densidades de corrente aplicadas foi avaliada. Soluções contendo citrato e/ou baixo pH não resultaram em filmes com boas propriedades. O uso de glicina e pH 7 resultou em filmes amorfos e com melhores propriedades magnéticas: magnetização de saturação de 1,2 T e coercividade de 50 Oe. Com o uso da célula de Hull rotativa foi possível avaliar como variava a composição da liga e as densidades de corrente parciais de cada um dos elementos. Notou-se que a deposição de Ni era menor quanto maior a concentração de Co+2 na solução e que o aumento na concentração de glicina favorece a deposição de Co e Mo e prejudica a deposição de Ni. Além disso...

Síntese e caracterização de filmes finos da fase beta-BaB2O4; Synthesis and characterization of Beta-BaB2O4 thin films

Neves, Person Pereira
Fonte: Biblioteca Digitais de Teses e Dissertações da USP Publicador: Biblioteca Digitais de Teses e Dissertações da USP
Tipo: Dissertação de Mestrado Formato: application/pdf
Publicado em 25/04/2001 PT
Relevância na Pesquisa
66.55%
BBO. Os filmes finos ou espessos foram preparados através do método dos precursores poliméricos (Método Pechini) e através da técnica por evaporação por feixe de elétrons. Nas amostras preparadas através do método dos precursores poliméricos, a razão entre os compostos BaO e 'B IND.2''O IND.3' teve um papel fundamental no processo de estabilização fase BBO. Esta estabilização só foi possível quando a amostra foi preparada com óxido de boro em excesso, numa razão 70% 'B IND.2''O IND.3' e 30% BaO (% peso), muito distante da composição estequiométrica 32% 'B IND.2''O IND.3' - 68% BaO. A análise química desta amostra mostrou que a perda do elemento boro está ocorrendo durante a síntese das amostras. Devido à baixa viscosidade da solução estabilizada, foram obtidos filmes extremamente finos o que dificultou a análise por difração de raios-X. A análise por microscopia de força atômica destes filmes mostrou uma distribuição irregular de tamanhos e formas de grãos. A modificação do método Pechini pela adição de adição de poliidróxidos em substituição ao etilenoglicol mostrou ser eficiente na estabilização da fase BBO. A partir da substituição parcial ou total do etilenoglicol pelo sorbitol foi possível obter uma solução límpida...

Grazing incidence X-ray diffraction and atomic force microscopy analysis of BaBi2Ta2O9 thin films

Mastelaro, V. R.; Foschini, C. R.; Varela, José Arana
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 57-63
ENG
Relevância na Pesquisa
66.53%
Thin films of BaBi2Ta2O9 (BBT) composition were prepared through the metal organic decomposition method. The crystallinity, phase formation, crystallite size and morphology of the thin films were measured as a function of the type of substrate, stoichiometry of solution and process variables such as thickness and temperature. The thin films were investigated by grazing incidence X-ray diffractometry and atomic force microscopy (AFM) techniques. For the sample without excess of bismuth, diffraction peaks other than that of the BBT phase were observed. A well crystallized BBT single phase was observed for films prepared from a solution with 10% excess of bismuth, deposited on Si/Pt substrate, with a thickness up to 150 nm and sintered at temperatures of 700 degreesC. The thin BBT phase films heat-treated at 600 degreesC presented a diffraction pattern characteristic of samples with lower degree of crystallinity whereas for the thin films heat-treated at 800 degreesC, we observed the presence of other phases than the BBT. For the thin film deposited on the Sin+ substrate, we observe that the peaks corresponding to the BBT phase are broader than that observed on the samples deposited on the Pt and Si/Pt substrates. No variation of average crystallite size was observed as the excess of Bi increased from 10 to 20%. AFM images for the samples showed that the increasing the amount of bismuth promotes grain growth. The average surface roughness measured was in the range of 16-22 nm showing that the bismuth amount had no or little effect on the roughness of films. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Preparation, structural and optical characterization of BaWO4 and PbWO4 thin films prepared by a chemical route

Pontes, F. M.; Maurera, MAMA; Souza, A. G.; Longo, Elson; Leite, E. R.; Magnani, R.; Machado, MAC; Pizani, P. S.; Varela, José Arana
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 3001-3007
ENG
Relevância na Pesquisa
66.55%
Polycrystalline BaWO4 and PbWO4 thin films having a tetragonal scheelite structure were prepared at different temperatures. Soluble precursors such as barium carbonate, lead acetate trihydrate and tungstic acid, as starting materials, were mixed in aqueous solution. The thin films were deposited on silicon, platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure of the thin films were investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and specular reflectance infrared Fourier transform spectroscopy, respectively. Nucleation stages and surface morphology evolution of thin films on silicon substrates have been studied by atomic force microscopy. XRD characterization of these films showed that BaWO4 and PbWO4 phase crystallize at 500 degreesC from an inorganic amorphous phase. FTIR spectra revealed the complete decomposition of the organic ligands at 500 degreesC and the appearance of two sharp and intense bands between 1000 and 600 cm(-1) assigned to vibrations of the antisymmetric stretches resulting from the high crystallinity of both thin films. The optical properties were also studied. It was found that BaWO4 and PbWO4 thin films have Eg = 5.78 eV and 4.20 eV...

Microstructural and optical characterization of CaWO4 and SrWO4 thin films prepared by a chemical solution method

Maurera, MAMA; Souza, A. G.; Soledade, LEB; Pontes, F. M.; Longo, Elson; Leite, E. R.; Varela, José Arana
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 727-732
ENG
Relevância na Pesquisa
66.54%
Stoichiometric CaWO4 and SrWO4 thin films were synthesized using a chemical solution processing, the so-called polymeric precursor method. In this soft chemical method, soluble precursors such as strontium carbonate, calcium carbonate and tungstic acid, as starting materials, were mixed in an aqueous solution. The thin films were deposited on glass substrates by means of the spinning technique. The surface morphology and crystal structure of the thin films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Nucleation stages and surface morphology evolution of the thin films on glass substrates were studied by atomic force microscopy. The films nucleate at 300 degreesC, after the coalescence of small nuclei into larger grains yielding a homogeneous dense surface. XRD characterization of these films showed that the CaWO4 and SrWO4 phases crystallize at 400 degreesC from an inorganic amorphous phase. No intermediate crystalline phase was identified. The optical properties were also studied. It was found that CaWO4 and SrWO4 thin films have an optical band gap, E-gap=5.27 and 5.78 eV, respectively, of a direct transition nature. The excellent microstructural quality and chemical homogeneity confirmed that this soft solution processing provides an inexpensive and environmentally friendly route for the preparation of CaWO4 and SrWO4 thin films. (C) 2003 Elsevier B.V. All rights reserved.

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Rangel, J. H.; Carreño, N. L V; Leite, E. R.; Longo, Elson; Campos, C. E M; Lanciotti, F.; Pizani, P. S.; Varela, José Arana
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Artigo de Revista Científica Formato: 7-12
ENG
Relevância na Pesquisa
66.53%
Pb1-xLaxTiO3 thin films, (X=0.0; 13 and 0.27mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO2/Si(111), Si(100) and glass substrates by spin coating, and annealed in the 200-300°C range in an O2 atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO3. The films deposited on Pt/Ti/SiO2/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration. © 2002 Elsevier Science B.V. All rights reserved.

Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films

Araújo, E. B.; Lima, E. C.; Bdikin, I. K.; Kholkin, A. L.
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Conferência ou Objeto de Conferência
ENG
Relevância na Pesquisa
66.54%
Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the filmsubstrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2012 IEEE.

Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

Araújo, E. B.; Lima, E. C.; Bdikin, I. K.; Kholkin, A. L.
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
66.52%
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2013 AIP Publishing LLC.

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Pontes, D. S L; Pontes, F. M.; Pereira-da-Silva, Marcelo A.; Zampieri, M.; Chiquito, A. J.; Pizani, P. S.; Longo, Elson
Fonte: Universidade Estadual Paulista Publicador: Universidade Estadual Paulista
Tipo: Artigo de Revista Científica
ENG
Relevância na Pesquisa
66.62%
Structural, microstructural and ferroelectric properties of Pb0.90Ca0.10TiO3 (PCT10) thin films deposited using La0.50Sr0.50CoO3 (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO6 octahedron unit due to the reduction of lattice parameters. Remnant polarization (P r ) values are about 30 μC/cm2 and 12 μC/cm2 for PCT10/Pt and PCT10/LSCO thin films...

Structural, dielectric, ferroelectric and optical properties of PBCT, PBST and PCST complex thin films on LaNiO3 metallic conductive oxide layer coated Si substrates by the CSD technique

Pontes, D. S. L.; Chiquito, A. J.; Pontes, F. M.; Longo, E.
Fonte: Elsevier B.V. Publicador: Elsevier B.V.
Tipo: Artigo de Revista Científica Formato: 33-39
ENG
Relevância na Pesquisa
66.61%
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Processo FAPESP: 08/57150-6; Processo FAPESP: 11/20536-7; Processo FAPESP: 13/07296-2; Ferroelectric thin films and LaNiO3 (LNO) metallic conductive oxide thin films were prepared by a chemical solution deposition (CSD) method. PBCT60, PBST60 and PCST60 ferroelectric thin films were grown on different structures such as LNO/Si and single-crystalline quartz SiO2 (X-cut) substrates. The LNO layer acts as the bottom electrode for the electrical measurements. X-ray diffraction (XRD) analysis shows that LNO thin films on Si substrates and PBCT60, PBST60 and PCST60 thin films on LNO/Si structures are poly-crystalline with a moderate (110)-texture and a complete perovskite phase. LNO, PBCT60, PBST60 and PCST60 thin films have a continuous, dense and homogenous microstructure with a grain size on the order of 50-80 nm. Electrical resistivity-dependence temperature data confirm that LNO thin films display a good metallic character over a wide large range of temperatures. Optical characteristics of PBCT60, PBST60 and PCST60 thin films have also been investigated using ultraviolet-visible (UV-vis) spectroscopy in the wavelength range of 200-1100 nm. Ferroelectric thin films show a direct allowed optical transition with optical band gap values on the of order of 3.54...

Estudos das propriedades magnéticas dos filmes finos de GaAs dopado com Mn e de Zn1-xCoxO; Studies of the magnetic properties on Mn-doped GaAs and Zn1-xCoxO thin films

Wellington Akira Iwamoto
Fonte: Biblioteca Digital da Unicamp Publicador: Biblioteca Digital da Unicamp
Tipo: Dissertação de Mestrado Formato: application/pdf
Publicado em 21/07/2007 PT
Relevância na Pesquisa
66.52%
Semicondutores ferromagnéticos (FM) são compostos de grande interesse tecnológico devido à possibilidade de combinar suas cargas e o grau de liberdade de spin para produzir dispositivos eletrônicos. Em particular, filmes finos semicondutores dopados com metais de transição têm se tornado foco de intensa investigação científica desde a descoberta do ferromagnetismo com razoável temperatura de Curie [1] ?[4]. Exemplos de semicondutores magnéticos diluídos (DMS) são os filmes finos de GaAs dopado com Mn e ZnO dopado Co. Nessa dissertação, nós apresentamos experimentos de Ressonância Paramagnética Eletrônica (EPR) e de susceptibilidade magnética para os filmes finos amorfos e cristalinos de GaAs dopados com Mn e filmes cristalinos de ZnO dopados com Co, com a finalidade de explorar as propriedades magnéticas globais e locais nesses DMS. Para todos os filmes amorfos de GaAs dopados com Mn, os nossos resultados indicaram a ausência de qualquer ordenamento ferromagnético entre as temperaturas 300 > T > 2 K ao contrário dos filmes cristalinos que foi observado ferromagnetismo em T < 110 K. Além do mais, observamos nas medidas de EPR uma única linha associada aos íons localizados de Mn 2+ para os filmes finos amorfos de GaAs dopados com Mn e g ~ 2...

Sistemas químicos nanoestruturados : nanopartículas caroço-casca em suporte poroso funcional e filmes finos alternados de óxidos semicondutores (TiO2, MoO3, WO3); Nanostructutred chemical systems : core-shell nanoparticles in functional porous support and alternate thin films of semiconductors oxide (TiO2, MoO3, WO3)

Elias de Barros Santos
Fonte: Biblioteca Digital da Unicamp Publicador: Biblioteca Digital da Unicamp
Tipo: Tese de Doutorado Formato: application/pdf
Publicado em 29/09/2011 PT
Relevância na Pesquisa
66.54%
Este trabalho de tese é referente à preparação e caracterização de sistemas nanoestruturados na forma de nanopartículas caroço-casca e filmes finos alternados dos óxidos semicondutores: TiO2, MoO3 e WO3. Para tal finalidade foram preparadas nanopartículas monocomponentes individuais dos três óxidos mencionados (PVG/TiO2, PVG/MoO3 e PVG/WO3) e nanopartículas caroço-casca bicomponentes (PVG/TiO2-MoO3, PVG/MoO3-TiO2 e PVG/TiO2-WO3), usando o vidro poroso Vycor® (PVG) como suporte. Também foram preparados filmes finos individuais e alternados de TiO2 e MoO3. Para a síntese das nanopartículas foram feitas impregnações do PVG com soluções precursoras dos compostos di-(propóxido)-di-(2-etilhexanoato) de titânio (IV) em hexano, 2-etilhexanoato de molibdênio (VI) em hexano e do composto di-[hexaquis(m-acetato)triacetato(m3-oxo)tritungstênio(III, III, IV) em água. Foi empregado o procedimento de ciclos de impregnação-decomposição sucessivos, que consiste em repetir, empregando o mesmo suporte poroso, o procedimento de impregnação do composto e sua posterior decomposição térmica. Com este método foi possível controlar o tamanho das nanopartículas, que seguido da alternância dos precursores envolvidos em cada ciclo levou a obtenção de nanopartículas compostas por bicamadas (caroço-casca). Os sistemas de nanopartículas foram caracterizados pelas técnicas de espectroscopia Raman...

Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering

Gordillo,G.; Mesa,F.; Calderón,C.
Fonte: Sociedade Brasileira de Física Publicador: Sociedade Brasileira de Física
Tipo: Artigo de Revista Científica Formato: text/html
Publicado em 01/09/2006 EN
Relevância na Pesquisa
66.53%
Mo thin films have been deposited using a DC magnetron sputtering system with an S-gun configuration electrode and characterized electrically and morphologically. The influence of the sputtering gas pressure and glow discharge (GD) power, on the electrical resistivity of Mo thin films and on the contact resistivity of Mo to Cu(In,Ga)Se2 (CIGS) films was determined through an exhaustive parameter study. This study also allowed us to find the conditions to deposit Mo films with suitable properties for its use as back contact of solar cells based on CIGS. Resistivities smaller than 1x10-4 omega.cm and contact resistivities smaller than 0.3 omegacm² were found. Mo films with these characteristics are suitable for back contacts in solar cells based on CIGS. It was also found that the Mo thin films, deposited by DC magnetron sputtering on CIGS thin films, act effectively as ohmic contacts. The main contribution of this work was to obtain Mo thin films with adequate properties to be used as back contact for CIGS based solar cells using a DC sputtering system with S-gun configuration electrode, which allows growing the film with better surface quality and at a higher deposition rate than those deposited using the conventional planar RF sputtering system.

Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition /

Yazdanian, Mohammad Mehdi.
Fonte: Brock University Publicador: Brock University
Tipo: Electronic Thesis or Dissertation
ENG
Relevância na Pesquisa
66.59%
SrMg^Rui-iOa thin films were made by using pulsed laser deposition on SrTiOa (100) substrates in either O2 or Ar atmosphere. The thin films were characterized by x-ray diffraction, energy dispersive x-ray microanalysis, dc resistivity measurement, and dc magnetization measurement. The effect of Mg doping was observed. As soon as the amount of Mg increased in SrMg-cRui-iOa thin films, the magnetization decreased, and the resistivity increased. It had little effect on the Curie temperature (transition temperature). The magnetization states of SrMgiRui-iOa thin films, for x < 0.15, are similar to SrRuOs films. X-ray diffraction results for SrMga-Rui-iOa thin films made in oxygen showed that the films are epitaxial. The thin films could not be well made in Ar atmosphere during laser ablation as there was no clear peak of SrMg^Rui-iOa in x-ray diffraction results. Substrate temperatures had an effect on the resistivity of the films. The residual resistivity ratios were increased by increasing substrate temperature. It was observed that the thickness of thin films are another factor for film quality: Thin films were epitaxial, but thicker films were not epitaxial.

Films delgados mesoporosos de óxidos metálicos, mixtos e híbridos. Hacia un diseño racional de nanomateriales funcionales; Mesoporus metallic, mixed and hybrid oxide thin films. Towards a rational design of functional nanomaterials

Angelomé, Paula C.
Fonte: Facultad de Ciencias Exactas y Naturales. Universidad de Buenos Aires Publicador: Facultad de Ciencias Exactas y Naturales. Universidad de Buenos Aires
Tipo: info:eu-repo/semantics/doctoralThesis; tesis doctoral; info:eu-repo/semantics/publishedVersion Formato: application/pdf
Publicado em //2008 SPA
Relevância na Pesquisa
66.59%
Los óxidos mesoporosos son materiales que presentan poros monodispersos (de tamaños de entre 2 y 50 nm) altamente ordenados, de elevada área específica (100 - 1000 m2/g). Se sintetizan mediante la combinación de dos procesos: reacciones sol gel, que dan lugar al material inorgánico o híbrido, y autoensamblado de moléculas anfifílicas, que actúan como molde de los poros. Entre las aplicaciones de estos materiales se encuentran: (foto)catálisis, sorción, sensores y otros dispositivos, etc. En este trabajo se realizó un estudio de la síntesis de films delgados mesoporosos de óxidos metálicos, mixtos e híbridos orgánico-inorgánicos. Estos films delgados se obtuvieron mediante dip coating a través del proceso conocido como Autoensamblado Inducido por Evaporación, y fueron caracterizados mediante una gran variedad de técnicas de microscopía, espectroscopia y difracción, de manera de conocer cabalmente la estructura a nivel micro, meso y macroscópico. En una primera parte, se presenta la síntesis de films delgados mesoporosos de TiO2, ZrO2 y óxidos mixtos Ti-Si, Zr-Si. En todos los casos, se estudió la relación existente entre la estructura del material obtenido y las condiciones de síntesis (composición del sol...

Growth and Characterization of Epitaxial Oxide Thin Films

Garg, Ashish
Fonte: University of Cambridge; Department of Materials Science and Metallurgy Publicador: University of Cambridge; Department of Materials Science and Metallurgy
Tipo: Thesis; Doctoral Formato: 9026849 bytes; application/pdf
EN
Relevância na Pesquisa
66.59%
Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study...

High-reflectance, sputter-deposited aluminum alloy thin thin films for micro-electro-mechanical systems

Barron, Lance
Fonte: Rochester Instituto de Tecnologia Publicador: Rochester Instituto de Tecnologia
Tipo: Tese de Doutorado Formato: Hardbound
EN_US
Relevância na Pesquisa
66.52%
This study comprises an investigation of highly reflective thin film for microelectro- mechanical systems (MEMS) consisting of reflective components. For these applications, the desired film system must have (1) low stress, (2) high specular reflectivity, (3) improved nano-hardness relative to pure aluminum, (4) compatibility with traditional semiconductor fabrication techniques. This study is an in depth investigation of both the specular reflectance and mechanical properties of thin film reflectors formed by low-thermal (<200°C) processing. Six different aluminum films (containing Cu, Ti, Cr) were chosen based on extensive literature research. Each film was characterized by a variety of optical, electrical, and mechanical analytical techniques to obtain data relating microstructure to the film’s reflectivity and mechanical properties. A complete dielectric function for each deposited aluminum alloy has been developed utilizing Drude-Lorentz parameters and effective media approximations (EMA) to account for film surface topography. Results show that copper solute addition generate films that maintain much of the bulk reflectance of pure aluminum while refining surface morphology to create a more specular surface consisting of smaller...

The role of strain and structure on oxygen ion conduction in nanoscale zirconia and ceria thin films

Jiang, Jun
Fonte: University of Delaware Publicador: University of Delaware
Tipo: Tese de Doutorado
Relevância na Pesquisa
66.65%
Hertz, Joshua L.; Solid oxide fuel cells (SOFCs), an all solid-state energy conversion device, are promising for their high efficiency and materials stability. The solid oxide electrolytes are a key component that must provide high ionic conductivity, which is especially challenging for intermediate temperature SOFCs operating between 500 ??C - 700 ??C. Doped zirconia and ceria are the most common solid electrolyte materials. Recent reports have suggested that nanoscale ytrria stabilized zirconia (YSZ) thin films may provide better performance in this regard. However, the mechanism behind the increased conductivity of nanoscale thin films is still unclear and the reported experimental results are controversial. In the thesis presented here, the effects of mechanical strain and microstructure on the ionic conductivity have been investigated in ultrathin zirconia- and ceria-based thin films. Reactive RF co-sputtering with metal targets was used to prepare zirconia and ceria based thin films for high purity, modulated composition and thickness. The films were as thin as 10-20 atomic layers thick. X-ray photoelectron spectroscopy, X-ray diffraction and transmission electron microscopy were the main tools to investigate the composition...